The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Oct. 02, 2019
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/046 (2013.01); H01L 21/049 (2013.01); H01L 29/045 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/4916 (2013.01); H01L 29/4925 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 29/78684 (2013.01);
Abstract
A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.