The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Jul. 25, 2016
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yutaro Yamaguchi, Tokyo, JP;

Masatake Hangai, Tokyo, JP;

Koji Yamanaka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 23/482 (2006.01); H01L 23/528 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42316 (2013.01); H01L 23/4821 (2013.01); H01L 23/5286 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/7786 (2013.01);
Abstract

A semiconductor device includes: an underlying substrate; a semiconductor layer formed on the underlying substrate; electrode patterns in which a drain electrode and a source electrode are alternately arranged along an array direction determined in advance, on the semiconductor layer; and a group of gate fingers each having a shape extending in an extending direction which is different from the array direction. Each of the gate fingers is disposed in a region between the drain electrode and the source electrode. Moreover, the gate fingers are arranged at positions displaced from one another in the extending direction.


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