The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Aug. 21, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Myoung-soo Kim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01); H01L 21/3215 (2006.01); H01L 21/308 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/768 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/42356 (2013.01); H01L 29/45 (2013.01); H01L 29/66568 (2013.01); H01L 29/7833 (2013.01); H01L 21/0274 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/3085 (2013.01); H01L 21/32139 (2013.01); H01L 21/32155 (2013.01); H01L 29/42364 (2013.01); H01L 29/4933 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01);
Abstract

Integrated circuit devices are provided. An integrated circuit device includes a substrate and a device isolation film on the substrate. An active region of the substrate is defined by the device isolation film on the substrate and has a first width in a horizontal direction. A gate electrode is on the active region and has a second width equal to or less than the first width of the active region in the horizontal direction. The integrated circuit device includes an insulating spacer over the device isolation film and the active region.


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