The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Apr. 09, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jaehyun Yang, Suwon-si, KR;
Bio Kim, Seoul, KR;
Yujin Kim, Suwon-si, KR;
Kyong-Won An, Seoul, KR;
Sookyeom Yong, Hwaseong-si, KR;
Junggeun Jee, Siheung-si, KR;
Youngjun Cheon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.