The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
May. 29, 2019
Globalfoundries Inc., Grand Cayman, KY;
Mankyu Yang, Fishkill, NY (US);
Vara Govindeswara Reddy Vakada, San Jose, CA (US);
Edward Maciejewski, Waterford, NY (US);
Brian Greene, Portland, OR (US);
Atsushi Ogino, Fishkill, NY (US);
Vikrant Chauhan, Cohoes, NY (US);
Prianka Sengupta, Malta, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a device-under-testing that has one or more source/drain regions and a first metallization level arranged over the device-under-testing. The first metallization level includes one or more first interconnect lines. The structure further includes a contact level having one or more first contacts arranged between the first metallization level and the device-under-testing. The one or more first contacts directly connect the one or more first interconnect lines with the one or more source/drain regions. The structure further includes a second metallization level arranged over the first metallization level. The second metallization level has a first test pad and one or more second interconnect lines connecting the one or more first interconnect lines with the first test pad.