The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Dec. 10, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dohyun Kwon, Hwaseong-si, KR;
Abstract
Methods of manufacturing an integrated circuit device are provided. A method of manufacturing an integrated circuit device includes sequentially forming a device layer, a wiring insulating layer, and a hard mask layer on a semiconductor substrate. The method includes sequentially removing a first region and a second region of the hard mask layer by using a first mask layer having a first opening and a second mask layer having a second opening as an etch mask, respectively. The method includes forming a first wiring recess through the wiring insulating layer and a second wiring recess having a depth that is less than that of the first wiring recess by removing a portion of the wiring insulation layer by using a portion of the hard mask layer as an etching mask. Moreover, the method includes forming a wiring structure that is in the first wiring recess and the second wiring recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile