The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Mar. 13, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Tomoya Saito, Tokyo, JP;
Naoki Takizawa, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0441 (2013.01); G11C 16/26 (2013.01);
Abstract
It is to optimize the initial threshold voltages of each memory area in a semiconductor memory device including a plurality of memory areas. A semiconductor memory device according to the embodiment includes a first memory area for storing data and a second memory area for storing the information related to the first memory area. In the respective memory cells arranged in the first and the second memory areas, the initial threshold voltages of the memory cells arranged in the second memory area are designed to be higher than those of the memory cells arranged in the first memory area.