The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Mar. 05, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sung-min Joe, Seoul, KR;

Seung-Jae Lee, Hwaseong-si, KR;

Sun-gun Lee, Daegu, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/32 (2006.01); G11C 11/56 (2006.01); G11C 8/14 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/32 (2013.01); G11C 16/3459 (2013.01); G11C 8/14 (2013.01); G11C 2211/5648 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of programming a non-volatile memory device including a first memory block and a second memory block includes: performing a first program operation on a first memory cell in the first memory block and connected to a first word line of a first level with respect to a substrate; after the performing of the first program operation on the first memory cell, performing the first program operation on a second memory cell in the second memory block and connected to a second word line of the first level; and after the performing of the first program operation on the second memory cell, performing a second program operation on the first memory cell.


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