The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Mar. 04, 2020
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventors:
Gyu Tae Park, Icheon-si, KR;
Young Suk Seo, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 11/34 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/222 (2013.01); G11C 7/109 (2013.01); G11C 7/1057 (2013.01); G11C 7/1063 (2013.01); G11C 7/1084 (2013.01); G11C 7/227 (2013.01); G11C 11/34 (2013.01);
Abstract
A semiconductor device may include a first internal command generation circuit configured to advance a phase of a first external command in accordance with a delay time of an on die termination (ODT) path and a first latency and generate the first delay command; and a second internal command generation circuit configured to advance a phase of a second external command in accordance with a delay time of a clock path and a second latency and to generate a second delay command.