The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Feb. 15, 2019
Applicants:

Ablic Inc., Chiba-shi, Chiba, JP;

The Ritsumeikan Trust, Kyoto-shi, Kyoto, JP;

Inventors:

Fumiyasu Utsunomiya, Chiba, JP;

Takakuni Douseki, Kusatsu, JP;

Ami Tanaka, Kusatsu, JP;

Assignees:

ABLIC INC., Chiba, JP;

THE RITSUMEIKAN TRUST, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/08 (2006.01); G05F 3/16 (2006.01); G01J 5/34 (2006.01); G01R 19/00 (2006.01); H03K 19/0944 (2006.01);
U.S. Cl.
CPC ...
G01J 5/34 (2013.01); G01R 19/00 (2013.01); G05F 3/16 (2013.01); H03F 3/082 (2013.01); H03K 19/0944 (2013.01);
Abstract

A signal detection circuit includes: a power terminal; a first current limitation circuit; a second current limitation circuit; a current-voltage conversion circuit; a first p-channel MOS transistor including a source, a gat, and a drain; a first n-channel MOS transistor including a drain, a gate, and a source; and a second n-channel MOS transistor in which a drain is connected to a first connection point connecting the resistor with the drain of the first n-channel MOS transistor, a gate is connected to a second connection point connecting the drain of the first p-channel MOS transistor with the current-voltage conversion circuit, and a source is grounded.


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