The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Mar. 01, 2018
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Ok-Min Moon, Suwon-si, KR;
Sang-Soo Kim, Icheon-si, KR;
Eung-Rim Hwang, Seoul, KR;
Jong-Young Cho, Hanam-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); C11D 11/00 (2006.01); C11D 7/32 (2006.01); C11D 7/08 (2006.01); C11D 7/10 (2006.01); H01L 21/3213 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); C11D 7/06 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); C11D 7/06 (2013.01); C11D 7/08 (2013.01); C11D 7/10 (2013.01); C11D 7/3218 (2013.01); H01L 21/02057 (2013.01); H01L 21/02074 (2013.01); H01L 21/3212 (2013.01); H01L 21/3213 (2013.01); H01L 21/762 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract
A method for fabricating an electronic device including a semiconductor memory may include: forming a material layer over a substrate; forming a material pattern by etching the material layer, the etching providing an etch residue on sidewalls of the material pattern; and removing the etch residue, wherein removing of the etch residue includes performing a cleaning process using a cleaning composition including water and a fluorine-containing compound or an amine, and having a pH in a range of 7 to 14.