The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Nov. 07, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, Gyeonggi-do, KR;
Hyeonjin Shin, Suwon-si, KR;
Meeree Kim, Suwon-si, KR;
Hyoyoung Lee, Suwon-si, KR;
Yunhee Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile