The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

May. 17, 2018
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Yasushige Mukunoki, Chiyoda-ku, JP;

Takashi Masuhara, Chiyoda-ku, JP;

Takeshi Horiguchi, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/082 (2006.01); H03K 17/18 (2006.01); H02M 1/08 (2006.01); G01R 31/27 (2006.01);
U.S. Cl.
CPC ...
H03K 17/082 (2013.01); G01R 31/27 (2013.01); H02M 1/08 (2013.01); H03K 17/18 (2013.01); H03K 2217/0027 (2013.01);
Abstract

A drive circuit for a power semiconductor element according to the present disclosure includes: a control command unit that outputs a turn-on command for a power semiconductor element; a gate voltage detection unit that detects a gate voltage applied to a gate terminal after the control command unit outputs the turn-on command; a differentiator that subjects the gate voltage detected by the gate voltage detection unit to time differentiation; and a determination unit that determines, based on the gate voltage detected by the gate voltage detection unit and a differential value by the differentiator, whether the power semiconductor element is in a short-circuit state or not.


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