The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Sep. 15, 2017
Applicant:
Fairchild Semiconductor Corporation, Sunnyvale, CA (US);
Inventors:
Adrian Mikolajczak, Los Altos, CA (US);
Chang Su Mitter, Los Gatos, CA (US);
Assignee:
FAIRCHILD SEMICONDUCTOR CORPORATION, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 17/06 (2006.01); H03K 17/30 (2006.01); H03K 17/12 (2006.01);
U.S. Cl.
CPC ...
H03K 17/06 (2013.01); H03K 17/122 (2013.01); H03K 17/302 (2013.01);
Abstract
In at least one general aspect, an apparatus can include a first field effect transistor (FET) device and a second FET device. The apparatus can include a characterization circuit coupled to the first FET device and the second FET device where the characterization circuit can be configured to characterize a responsiveness of each of the first FET device and the second FET device. The apparatus can include a balancer configured to produce a modified gate drive signal for the first FET device based on the responsiveness of the first FET device.