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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10790787 B1

PDFFull Text
Date of Patent:
Sep. 29, 2020

Filed:

Aug. 12, 2019

Fet operational temperature determination by gate structure resistance thermometry

Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Simon John Mahon, Avalon Beach, AU;

Allen W. Hanson, Cary, NC (US);

Chuanxin Lian, Westford, MA (US);

Frank Gao, North Chelmsford, MA (US);

Rajesh Baskaran, Dracut, MA (US);

Bryan Schwitter, Marrickville, AU;

Assignee:

MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US);

Attorneys:

Thomas | Horstemeyer, LLP

Jason M. Perilla

Primary Examiner:

Nicholas J Tobergte

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H03F 1/30 (2006.01); H01L 23/535 (2006.01); H01L 29/423 (2006.01); H03F 3/21 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); G01K 7/18 (2006.01); G01K 7/16 (2006.01); H01L 29/788 (2006.01); H01L 49/02 (2006.01); H01L 23/34 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H03F 1/301 (2013.01); G01K 7/16 (2013.01); G01K 7/18 (2013.01); H01L 23/535 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/42316 (2013.01); H01L 29/42324 (2013.01); H01L 29/7786 (2013.01); H01L 29/788 (2013.01); H03F 3/21 (2013.01); G01K 2217/00 (2013.01); H01L 23/34 (2013.01); H01L 28/20 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/41758 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/7816 (2013.01); H03F 2200/174 (2013.01); H03F 2200/468 (2013.01); H03F 2200/471 (2013.01); H03F 2200/481 (2013.01);
Abstract

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.

Find Patent Forward Citations

Mahon, Simon. (2020). Fet operational temperature determination by gate structure resistance thermometry (U.S. Patent No. 10790787). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10790787

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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