The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Jul. 11, 2018
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Zenghu Chang, Orlando, FL (US);
Xiaoming Ren, Orlando, FL (US);
Yanchun Yin, Orlando, FL (US);
Lam Mach, Orlando, FL (US);
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Abstract
The present invention demonstrates a technique for achieving milli-joule level and higher energy, broad bandwidth laser pulses centered around 2.4 micrometer with a kilohertz and other repetition rate. The key to such technique is to start with a broadband micro-joule level seed laser at around 2.4 micrometer, which could be generated through difference frequency generation, four-wave mixing process and other methods. This micro-joule level seed laser could then be amplified to above one milli-joule through chirped pulse amplification in a Cr2+:ZnSe or Cr2+:ZnS crystal pumped by a commercially available Ho:YAG or other appropriate suitable lasers. Due to the high seed energy, fewer gain passes are needed to achieve a milli-joule level output thus significantly simplifies laser architectures. Furthermore, gain narrowing effect in a typical chirped pulse amplifier is also mitigated and thus enable a broadband output.