The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Mar. 01, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Yefei Han, Yokkaichi Mie, JP;
Tetsu Morooka, Yokkaichi Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 7/06 (2006.01); G11C 13/00 (2006.01); G11C 7/12 (2006.01); G11C 29/00 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 7/06 (2013.01); G11C 13/003 (2013.01); G11C 13/0007 (2013.01); G11C 13/0033 (2013.01); H01L 27/249 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); G11C 7/12 (2013.01); G11C 29/04 (2013.01); G11C 29/70 (2013.01); G11C 2213/71 (2013.01); G11C 2213/76 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract
A memory device includes a first conductive layer and a second conductive layer. A variable resistance layer is disposed between the first conductive layer and the second conductive layer and includes a first layer containing a semiconductor or a first metal oxide, and a second layer containing a second metal oxide. A phase-change layer is disposed either between the first conductive layer and the variable resistance layer or between the second conductive layer and the variable resistance layer.