The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Mar. 14, 2017
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventors:

Kerem Y. Camsari, Lafayette, IN (US);

Ahmed Zeeshan Pervaiz, West Lafayette, IN (US);

Rafatul Faria, West Lafayette, IN (US);

Esteban E Marinero-Caceres, West Lafayette, IN (US);

Supriyo Datta, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H01L 43/06 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H01L 43/06 (2013.01); H01L 43/08 (2013.01);
Abstract

A switching device, comprising an anti-ferromagnet structure having an upper layer and a lower layer, the upper layer and lower layer anti-ferromagnetically coupled by an exchange coupling layer, the upper and lower layer formed of a similar material but having differing volumes, and wherein the device is configured to inject symmetrically spin-polarized currents through the upper and lower layers to achieve magnetic switching of the anti-ferromagnet structure.


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