The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Dec. 28, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Youn Joon Sung, Seoul, KR;

Yong Gyeong Lee, Seoul, KR;

Kwang Yong Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/36 (2010.01); H01L 33/58 (2010.01); G02F 1/13357 (2006.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01); H01L 33/58 (2013.01); G02F 1/133603 (2013.01); H01L 33/06 (2013.01); H01L 33/44 (2013.01);
Abstract

One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.


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