The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Jan. 28, 2019
Epistar Corporation, Hsinchu, TW;
Yen-Tai Chao, Hsinchu, TW;
Sen-Jung Hsu, Hsinchu, TW;
Tao-Chi Chang, Hsinchu, TW;
Wei-Chih Wen, Hsinchu, TW;
Ou Chen, Hsinchu, TW;
Chun-Hsiang Tu, Hsinchu, TW;
Yu-Shou Wang, Hsinchu, TW;
Jing-Feng Huang, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle α between thereof, 30°≤α≤80°.