The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

May. 09, 2019
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Takuma Fuyuki, Osaka, JP;

Takashi Go, Osaka, JP;

Takashi Ishizuka, Osaka, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01); H01L 31/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035272 (2013.01); H01L 27/14601 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01); H01L 31/109 (2013.01); H01L 31/12 (2013.01); H01L 31/1844 (2013.01);
Abstract

A semiconductor stacked body includes a base layer containing a III-V group compound semiconductor, a light-receiving layer containing a III-V group compound semiconductor, a control layer containing a III-V group compound semiconductor and disposed in contact with the light-receiving layer, a diffusion blocking layer containing a III-V group compound semiconductor and a p-type impurity that generates a p-type carrier, the diffusion blocking layer having a p-type impurity concentration of 1×10cmor less, and a contact layer containing a III-V group compound semiconductor and having p-type conductivity. These layers are stacked in this order. The concentration of an element in the control layer, the element being identical to a group V element contained in the light-receiving layer, is lower on a main surface of the control layer adjacent to the diffusion blocking layer than on a main surface of the control layer adjacent to the light-receiving layer.


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