The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Feb. 27, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Tasuku Sumino, Tokyo, JP;
Takayuki Hisaka, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01); H01L 29/423 (2006.01); H01L 29/47 (2006.01); H01L 29/40 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 29/812 (2013.01); H01L 21/321 (2013.01); H01L 29/401 (2013.01); H01L 29/42316 (2013.01); H01L 29/475 (2013.01);
Abstract
A gate electrode () is provided on the semiconductor layer () and a least includes a lowermost layer () in contact with the semiconductor layer (), and an upper layer () provided on the lowermost layer (). The upper layer () applies stress to the lowermost layer () to cause both edges of the lowermost layer () to curl up from the semiconductor layer ().