The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Feb. 14, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Young Chai Jung, Anyang-si, KR;
Myung Gil Kang, Suwon-si, KR;
Kang Ill Seo, Eumseong-gun, KR;
Seon Bae Kim, Hwaseong-si, KR;
Yong Hee Park, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 23/5226 (2013.01); H01L 29/45 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
VFET devices are provided. A VFET device includes a substrate including first and second protruding portions. The VFET device includes an isolation region between the first and second protruding portions. The VFET device includes first and second silicide regions on the first and second protruding portions, respectively. Moreover, the VFET device includes a contact on the first and second silicide regions. Related methods of forming a VFET device are also provided.