The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Mar. 15, 2019
Cystech Electronics Corp., New Taipei, TW;
Hsin-Yu Hsu, Hsinchu, TW;
Chen-Huang Wang, Hsinchu County, TW;
Cystech Electronics Corp., New Taipei, TW;
Abstract
A high-voltage metal-oxide-semiconductor field-effect transistor applied to a high-voltage range includes a substrate, an epitaxial layer, a plurality of first doped regions, a plurality of first trenches, a plurality of second trenches, a plurality of second doped regions, and a metal layer. The epitaxial layer is disposed on the substrate and used as a drain electrode. The plurality of first doped regions are disposed in the epitaxial layer. The plurality of first trenches are disposed on the plurality of doped regions in a spaced manner. Each of the first trenches has a first trench oxide layer and a first semiconductor layer which is connected to a source electrode. The plurality of second trenches are disposed between each of the first trenches in a spaced manner. Each of the second trenches has a second trench oxide layer and a second semiconductor layer which is connected to a gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile