The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Nov. 29, 2018
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventor:

Hongsuk Kim, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 27/3246 (2013.01); H01L 27/3258 (2013.01); H01L 27/3276 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 27/3213 (2013.01); H01L 51/5253 (2013.01); H01L 2227/323 (2013.01);
Abstract

A display device and a method of manufacturing the same are provided. A display device includes: a substrate, a semiconductor layer on the substrate, a gate insulating pattern on the semiconductor layer, a plurality of gate electrodes on the gate insulating pattern, and a thin-film transistor spaced apart from the gate insulating pattern, the thin-film transistor including: a source electrode contacting the top surface of the semiconductor layer, a source-drain electrode adjacent to the source electrode, a first of the plurality of gate electrodes being between the source-drain electrode and the source electrode, and a drain electrode adjacent to the source-drain electrode, a second of the plurality of gate electrodes being between the drain electrode and the source-drain electrode.


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