The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Aug. 29, 2019
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventor:
Jin Ha Kim, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 29/165 (2006.01); H01L 29/10 (2006.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 29/1029 (2013.01); H01L 29/165 (2013.01);
Abstract
Provided herein is a semiconductor device and a method of manufacturing the same. The semiconductor device has improved erase characteristics by using a select gate enclosing a portion a first semiconductor region overlapping a second semiconductor region. The first semiconductor region and the second semiconductor region are formed of different semiconductor materials.