The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Nov. 09, 2018
Globalfoundries Inc., Grand Cayman, KY;
Mankyu Yang, Fishkill, NY (US);
Vara Govindeswara Reddy Vakada, Halfmoon, NY (US);
Edward Maciejewski, Waterford, NY (US);
Brian Greene, Saratoga Springs, NY (US);
Atsushi Ogino, Fishkill, NY (US);
Vikrant Chauhan, Cohoes, NY (US);
Prianka Sengupta, Malta, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a test pad, a device-under-testing having one or more source/drain regions, and a metallization level arranged over the device-under-testing. The metallization level includes one or more interconnect lines that are connected with the test pad. One or more contacts, which are arranged between the metallization level and the device-under-testing, directly connect the one or more interconnect lines with the one or more source/drain regions.