The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Sep. 29, 2014
Applicant:

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;

Inventors:

Stefan Reber, Gundelfingen, DE;

Stefan Lindekugel, Denzlingen, DE;

Stefan Janz, Freiburg, DE;

Regina Pavlovic, Freiburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/677 (2006.01); C25F 3/12 (2006.01); C25F 3/14 (2006.01); C25F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67086 (2013.01); C25F 3/12 (2013.01); C25F 3/14 (2013.01); C25F 7/00 (2013.01); H01L 21/6723 (2013.01); H01L 21/6776 (2013.01); H01L 21/67115 (2013.01);
Abstract

The invention relates to a device and a method for continuous production of porous silicon layers (single or multiple layers) on workpieces made of silicon or workpieces with a silicon coating. The method according to the invention is thereby based on a one-sided etching method, the workpiece being guided horizontally, by means of a transport device, with the front side of the workpiece to be etched, past at least one etching chamber, comprising an electrolyte and a cathode. This method can be used in particular for the production of PV cells.


Find Patent Forward Citations

Loading…