The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Feb. 06, 2019
Applicant:
Kokusai Electric Corporation, Tokyo, JP;
Inventors:
Tatsuru Matsuoka, Toyama, JP;
Yoshitomo Hashimoto, Toyama, JP;
Assignee:
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); C23C 16/00 (2013.01); H01L 21/0206 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02334 (2013.01); H01L 21/31144 (2013.01); H01L 21/02126 (2013.01); H01L 21/31111 (2013.01);
Abstract
There is provided a technique that includes (a) forming a film containing silicon, carbon and nitrogen having a carbon concentration within a range from 10 at % to 15 at % on a substrate; (b) performing an oxidation process with respect to the substrate where the film is exposed on a surface thereof; and (c) performing a process using hydrogen fluoride with respect to the substrate where the film is exposed on the surface thereof after the oxidation process is performed.