The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Sep. 06, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Nobuyuki Kuboi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 15/00 (2006.01); G01B 15/04 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H05H 1/00 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32972 (2013.01); H01J 37/32926 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H05H 1/00 (2013.01); H05H 1/46 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01);
Abstract

[Object] To predict the damage distribution of a workpiece caused by ions and light from plasma more accurately within a practical computation time. [Solution] Provided is a damage prediction method including: using an operation apparatus to calculate, from fluxes of ions and light generated by plasma, fluxes of ions and light propagated through a pattern of a workpiece including a processing object, on the basis of the pattern; calculating, from the fluxes of ions and light propagated through the pattern, fluxes of ions and light arriving at a surface of the processing object, by ray tracing; and calculating, from the fluxes of ions and light arriving at the surface of the processing object, a damage distribution of the processing object.


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