The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Dec. 14, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Yong-Sung Cho, Hwaseong-si, KR;
Assignee:
Volentine, Whitt & Francos, PLLC, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 16/901 (2019.01); G11C 7/04 (2006.01); G06F 7/36 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0688 (2013.01); G06F 3/061 (2013.01); G06F 3/0655 (2013.01); G06F 7/36 (2013.01); G06F 16/902 (2019.01); G11C 7/04 (2013.01); G11C 16/3459 (2013.01);
Abstract
A memory device includes a memory cell array including a plurality of memory cells on which a programming loop is executed a plurality of times; a voltage generator configured to apply a verifying voltage to the memory cells, for verifying at least one programming state of the memory cells; and a voltage controller configured to control the voltage generator to change a level of the verifying voltage as a program loop count increases, based on temperature information about a temperature inside or outside the memory device.