The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Dec. 07, 2017
Applicant:

Tower Semiconductor Ltd., Migdal Haemek, IL;

Inventors:

Yakov Roizin, Afula, IL;

Menachem Vofsy, Kiriat Tivon, IL;

Alexey Heiman, Ramat Yishai, IL;

Yossi Rosenwaks, Hod Hasharon, IL;

Klimentiy Shimanovich, Ramat Gan, IL;

Yhonatan Vaknin, Yoqneam Illit, IL;

Assignee:

TOWER SEMICONDUCTOR LTD., Migdal Haemek, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); H01L 29/16 (2006.01); G01N 33/00 (2006.01); H01L 23/34 (2006.01); G01K 7/00 (2006.01); G01K 7/16 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); G01K 7/00 (2013.01); G01K 7/16 (2013.01); G01N 33/0016 (2013.01); H01L 23/345 (2013.01); H01L 29/16 (2013.01); G01K 2211/00 (2013.01); H01L 29/0673 (2013.01); H01L 29/408 (2013.01); H01L 29/775 (2013.01);
Abstract

Some demonstrative embodiments include an apparatus of a temperature sensor to sense temperature, the apparatus including a first pad on a silicon substrate; a second pad on the silicon substrate; a silicon nanowire having a first end coupled to the first pad and a second end coupled to the second pad, the silicon nanowire configured to drive a current between the first pad and the second pad, the current depending at least on the temperature; and a charged dielectric layer covering at least three sides of the silicon nanowire.


Find Patent Forward Citations

Loading…