The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Aug. 29, 2013
Applicants:

Pierre-marie J. Piel, Chandler, AZ (US);

David P. Lester, Phoenix, AZ (US);

Lionel Mongin, Chandler, AZ (US);

Inventors:

Pierre-Marie J. Piel, Chandler, AZ (US);

David P. Lester, Phoenix, AZ (US);

Lionel Mongin, Chandler, AZ (US);

Assignee:

NSP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05B 6/66 (2006.01); H05B 6/68 (2006.01); H05B 6/64 (2006.01);
U.S. Cl.
CPC ...
H05B 6/664 (2013.01); H05B 6/645 (2013.01); H05B 6/686 (2013.01); Y02B 40/143 (2013.01);
Abstract

An embodiment of a microwave power generation module includes an amplifier arrangement, an impedance matching element, and a resonant element. The amplifier arrangement includes a transistor with a transistor input and a transistor output. The impedance matching element is formed from a planar conductive structure. The planar conductive structure has a proximal end and a distal end, and the proximal end is electrically coupled to the transistor output. The resonant element has a proximal end electrically coupled to the distal end of the planar conductive structure, and the resonant element is configured to radiate electromagnetic energy having a microwave frequency in a range of 800 megahertz (MHz) to 300 gigahertz (GHz). A combination of the impedance matching element and the resonant element is configured to perform an impedance transformation between an impedance of the transistor and an impedance of an air cavity.


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