The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Sep. 25, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Mitsutaka Hano, Tokyo, JP;
Akihisa Yamamoto, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/687 (2006.01); G05F 1/00 (2006.01); G05F 3/02 (2006.01); H03K 17/16 (2006.01); H01L 29/78 (2006.01); H02M 1/08 (2006.01); H01L 29/40 (2006.01); H05B 45/37 (2020.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H01L 29/404 (2013.01); H01L 29/7818 (2013.01); H01L 29/7823 (2013.01); H02M 1/08 (2013.01); H03K 17/165 (2013.01); H05B 45/37 (2020.01);
Abstract
A semiconductor device includes a first drive circuit and a bootstrap control circuit. When a voltage Vis equal to or smaller than a power supply voltage V, the boost control circuit turns on a MOSFET by controlling a gate signal input to a gate terminal, and a back gate control circuit makes a voltage applied to a back gate terminal smaller than the voltage V.