The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Mar. 23, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor laser () includes an n-type semiconductor substrate (), a stack of an n-type cladding layer (), an active layer (), and a p-type cladding layer () successively stacked on the n-type semiconductor substrate (). An optical waveguide () includes a non-impurity-doped core layer () provided on a light output side of the semiconductor laser () on the n-type semiconductor substrate () and having a larger forbidden band width than the active layer (), and a cladding layer () provided on the core layer () and having a lower carrier concentration than the p-type cladding layer (). The semiconductor laser () includes a carrier injection region (X), and a non-carrier-injection region (X) provided between the carrier injection region (X) and the optical waveguide ().