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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784410 B1

PDFFull Text
Expired
Date of Patent:
Sep. 22, 2020

Filed:

Jul. 25, 2017

Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

Applicant:

King Abdullah University of Science and Technology, Thuwal, SA;

Inventors:

Tien Khee Ng, Thuwal, SA;

Chao Zhao, Thuwal, SA;

Davide Priante, Thuwal, SA;

Boon S. Ooi, Thuwal, SA;

Mohamed Ebaid Abdrabou Hussein, Thuwal, SA;

Assignee:

KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;

Attorneys:

Billion & Armitage

Gregory S. Schwartz

Primary Examiner:

Caridad Everhart

Int. Cl.
CPC ...
H01L 33/56 (2010.01); H01L 33/44 (2010.01); C25B 1/00 (2006.01); H01L 31/0216 (2014.01); C25B 1/04 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); C25B 1/003 (2013.01); C25B 1/04 (2013.01); H01L 31/0216 (2013.01); H01L 31/02161 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/1868 (2013.01); H01L 31/03044 (2013.01); H01L 31/03048 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 2933/0025 (2013.01); Y02P 20/134 (2015.11);
Abstract

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

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Ng, Tien. (2020). Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting (U.S. Patent No. 10784410). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10784410

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