The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Apr. 10, 2017
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventor:

Lutz Höppel, Alteglofsheim, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/22 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconductor region facing away from the second semiconductor region, and an electrically conductive mirror layer arranged between the first semiconductor region and the electrically conductive contact layer, and laterally protruding at the edge by the first semiconductor region and the electrically conductive contact layer so that between the first semiconductor region and the electrically conductive contact layer there is an interspace in which a protective layer is arranged for protecting the mirror layer, wherein the electrically conductive contact layer extends laterally to an edge of the first semiconductor region, and the electrically conductive contact layer consists of Ni.


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