The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Mar. 12, 2019
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Kosuke Sato, Tokyo, JP;
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Abstract
A nitride semiconductor light emitting element includes a first nitride semiconductor layer of a first conductivity type, nitride semiconductor stacked bodies each of which is formed on a portion of the first nitride semiconductor layer and includes a nitride semiconductor light emitting layer and a second nitride semiconductor layer of a second conductivity type, first electrodes formed on the first nitride semiconductor layer, and second electrodes each of which is formed on the second nitride semiconductor layers of the nitride semiconductor stacked bodies. The first and the second electrodes extend in a first direction. The first and the second electrodes are arranged in parallel with one another with gaps interposed therebetween in a second direction perpendicular to the first direction in plan view. A dimension of first electrodes sandwiched by second electrodes is greater than a dimension of first electrodes not sandwiched by second electrodes in the second direction.