The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Jul. 18, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Young Jo Tak, Seongnam-si, KR;

Sam Mook Kang, Hwaseong-si, KR;

Mi Hyun Kim, Seoul, KR;

Joo Sung Kim, Seongnam-si, KR;

Young Hwan Park, Yongin-si, KR;

Jong Uk Seo, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 33/04 (2010.01); H01L 33/20 (2010.01); H01L 33/40 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/04 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/405 (2013.01);
Abstract

A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.


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