The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Dec. 29, 2016
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka-shi, Osaka, JP;

Inventors:

Satoshi Tohoda, Osaka, JP;

Masato Shigematsu, Osaka, JP;

Kenta Matsuyama, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 31/022441 (2013.01); H01L 31/0747 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.


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