The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Sep. 06, 2018
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventor:
Young Bae Kim, Cheongju-si, KR;
Assignee:
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/80 (2006.01); H01L 27/085 (2006.01); H01L 29/808 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H02M 7/00 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7832 (2013.01); H01L 27/085 (2013.01); H01L 29/063 (2013.01); H01L 29/0649 (2013.01); H01L 29/0688 (2013.01); H01L 29/0696 (2013.01); H01L 29/1058 (2013.01); H01L 29/1066 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H01L 29/66659 (2013.01); H01L 29/66901 (2013.01); H01L 29/7835 (2013.01); H01L 29/808 (2013.01); H02M 7/00 (2013.01); H01L 29/1045 (2013.01); H01L 29/42368 (2013.01);
Abstract
Described is a semiconductor device including a first N-type well region disposed in a substrate and a second N-type well region in contact with the first N-type well region, a source region disposed in the first N-type well region, a drain region disposed in the second N-type well region, and a first gate electrode and a second gate electrode disposed spaced apart from the drain region. A maximum vertical length of the source region in a direction vertical to the first or second gate electrode is greater than a maximum vertical length of the drain region in the direction in a plan view.