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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784354 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Mar. 16, 2018

Trenches for increasing a quantity of reliable chips produced from a wafer

Applicant:

Lumentum Operations Llc, Milpitas, CA (US);

Inventors:

Arnaud Fily, Milpitas, CA (US);

Victor Rossin, Milpitas, CA (US);

David Venables, Milpitas, CA (US);

Jingcong Wang, Milpitas, CA (US);

Assignee:

Lumentum Operations LLC, Milpitas, CA (US);

Attorney:

Harrity & Harrity, LLP

Primary Examiner:

Ratisha Mehta

Int. Cl.
CPC ...
H01L 29/32 (2006.01); H01S 5/02 (2006.01); H01L 21/762 (2006.01); H01S 5/183 (2006.01); H01L 29/06 (2006.01); H01L 21/82 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01); H01L 21/306 (2006.01); H01S 5/24 (2006.01); H01L 33/12 (2010.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/762 (2013.01); H01L 21/82 (2013.01); H01L 22/24 (2013.01); H01L 29/0649 (2013.01); H01S 5/0201 (2013.01); H01S 5/183 (2013.01); H01S 5/18308 (2013.01); H01S 5/24 (2013.01); H01L 33/12 (2013.01); H01S 5/32 (2013.01); H01S 5/3406 (2013.01); H01S 2301/173 (2013.01);
Abstract

A light-emitting device may comprise a set of layers comprising a substrate layer, and a set of epitaxial layers deposited on the substrate layer. The set of epitaxial layers may include a strained layer. The strained layer may include a set of active zones to be used to generate optical gain. The light-emitting device may comprise a set of trenches etched into a subset of the set of layers of the light-emitting device. The set of trenches may prevent a set of defects or dislocations in a wafer from which the light-emitting device was formed from propagating into the set of active zones.

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