The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Mar. 06, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Hiroyuki Ohtori, Yokkaichi, JP;

Satoshi Seto, Kamakura, JP;

Takashi Fukushima, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/44 (2006.01); H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 27/1157 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes the following structure. First conductive layers are stacked in first direction and extends in second and third directions. The first conductive layers each includes a pair of first portions, and second and third portions. The first portions extend in second direction, is provided separately from each other in third direction and includes a metal. The second portion is provided between the first portions and includes silicon. The third portion is provided on at least one side of the second portion in second direction, extends in third direction, electrically connects the first portions and includes a metal. Memory pillars extend through the second portions in first direction. Contact plugs are respectively provided on the third portion of one of the first conductive layers.


Find Patent Forward Citations

Loading…