The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Mar. 21, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chandrasekharan Kothandaraman, New York, NY (US);

Babar Khan, Ossining, NY (US);

Nathan P. Marchack, New York, NY (US);

Bruce B. Doris, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/5252 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic tunnel junction (MTJ) containing device and methods of constructing the MTJ containing device are described. In an example, the MTJ containing device may be a memory element including a bottom electrode structure, a MTJ pillar, and a top electrode structure located on the MTJ pillar. The MTJ pillar has a non-circular lateral cross section, where the MTJ pillar has a bottommost portion forming an interface with an uppermost portion of the bottom electrode structure. The MTJ pillar has a lateral perimeter-to-area ratio that defines a breakdown voltage of the MTJ pillar.


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