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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784257 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Aug. 31, 2018

Integrating silicon-bjt to a silicon-germanium-hbt manufacturing process

Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Petrus Hubertus Cornelis Magnee, Malden, NL;

Pieter Simon van Dijk, Renkum, NL;

Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;

Dolphin Abessolo Bidzo, Nijmegen, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:

Julia Slutsker

Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/8222 (2006.01); H01L 21/8249 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/04 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0825 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/02598 (2013.01); H01L 21/02645 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/8222 (2013.01); H01L 21/8249 (2013.01); H01L 27/0248 (2013.01); H01L 27/0623 (2013.01); H01L 29/04 (2013.01); H01L 29/165 (2013.01); H01L 29/66242 (2013.01); H01L 29/66295 (2013.01); H01L 29/7325 (2013.01); H01L 29/7375 (2013.01);
Abstract

This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.

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