The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Jul. 24, 2017
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Makoto Tani, Inazawa, JP;

Yasutaka Awakura, Kakamigahara, JP;

Takeshi Kaku, Nagoya, JP;

Takashi Ebigase, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/48 (2006.01); B32B 15/04 (2006.01); B32B 15/20 (2006.01); C04B 35/645 (2006.01); C04B 37/02 (2006.01); H01L 23/15 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); B32B 15/04 (2013.01); B32B 15/20 (2013.01); C04B 35/645 (2013.01); C04B 37/026 (2013.01); H01L 21/4846 (2013.01); B32B 2457/14 (2013.01); C04B 2237/08 (2013.01); C04B 2237/125 (2013.01); C04B 2237/126 (2013.01); C04B 2237/127 (2013.01); C04B 2237/366 (2013.01); C04B 2237/368 (2013.01); C04B 2237/407 (2013.01); C04B 2237/60 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); C04B 2237/708 (2013.01); C04B 2237/72 (2013.01); H01L 23/15 (2013.01);
Abstract

Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.


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