The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Dec. 21, 2018
Marvell World Trade Ltd., St. Michael, BB;
Runzi Chang, San Jose, CA (US);
Chuan-Cheng Cheng, Fremont, CA (US);
MARVELL ASIA PTE, LTD., Singapore, SG;
Abstract
In an embodiment, a method comprises: forming a fin feature on a portion of a surface of a substrate; forming a first region of polycrystalline silicon over a first portion of the fin feature; forming a second region of polycrystalline silicon over a second portion of the fin feature; forming a third region of polycrystalline silicon over a third portion of the fin feature, wherein the third region of polycrystalline silicon is disposed between (i) the first region and (ii) the second region; forming a first spacer region between the first region and the third region; forming a second spacer region between the second region and the third region; removing the third region and at least a portion of the fin feature formed under the third region to thereby form a gap; and disposing a second dielectric material into the gap to form an isolation component.