The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
May. 15, 2019
Imec Vzw, Leuven, BE;
Boon Teik Chan, Leuven, BE;
Efrain Altamirano Sanchez, Kessel-Lo, BE;
IMEC VZW, Leuven, BE;
Abstract
A method for forming a cavity in a semiconductor structure and an intermediate structure is provided. The method includes: (a) providing a semiconductor structure comprising: (i) a semiconductor substrate; (ii) a set of line structures on the semiconductor substrate, each line structure having a top surface and sidewalls, the line structures being separated by trenches therebetween, and (iii) an oxygen-containing dielectric material at least partially filling the trenches in-between the line structures, wherein the top surface of at least one of the line structures is at least partially exposed, and wherein the exposed part of the top surface is composed of an oxygen-free dielectric material; (b) forming a layer of TaSiselectively onto the oxygen-free dielectric material with respect to the oxygen-containing dielectric material (c) forming the cavity by selectively removing at least a portion of the oxygen-containing dielectric material with respect to the TaSi.