The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Jun. 08, 2018
Applicant:

Uchicago Argonne, Llc, Chicago, IL (US);

Inventors:

Jeffrey A. Eastman, Argonne, IL (US);

Boyd W. Veal, Argonne, IL (US);

Peter Zapol, Argonne, IL (US);

Assignee:

UChicago Argonne, LLC, Chicago, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 45/00 (2006.01); H01L 21/285 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02241 (2013.01); H01L 21/182 (2013.01); H01L 21/28264 (2013.01); H01L 21/28581 (2013.01); H01L 45/00 (2013.01);
Abstract

Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting InOfilms grown on ionically conducting YO-stabilized ZrOsubstrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample.


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