The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Jul. 31, 2019
SK Hynix Inc., Gyeonggi-do, KR;
Yu Cai, San Jose, CA (US);
Jun Feng, San Jose, CA (US);
Norton Chu, San Jose, CA (US);
Fan Zhang, San Jose, CA (US);
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A method is provided for operating a storage system including memory cells and a memory controller. Each memory cell is an m-bit multi-level cell (MLC), where m is an integer. The method includes performing a soft read operation of a target memory cell and determining a current LLR (log likelihood ratio) value based on result from the soft read operation. The method also includes grouping m-bit cell values of neighboring memory cells and the target memory cell to respective n-bit indices, based on effect of neighboring memory cells on the LLR of the target memory cell, wherein n is an integer and n<m. An LLR compensation value is determined based on the n-bit indices, and a compensated LLR value is determined based on the current LLR value and the LLR compensation value. The method also includes performing soft decoding using the compensated LLR value.